Organization Overview:

The Center for Functional Nanomaterials (CFN) at Brookhaven is a DOE-funded national scientific user facility, offering users a supported research experience with top-caliber scientists and access to state-of-the- art instrumentation. The CFN mission is advancing nanoscience through frontier fundamental research and technique development and is the nexus of a broad collaboration network. Each year, CFN staff members support the research of nearly 600 external facility users.

Three strategic nanoscience themes underlie the CFN scientific facilities: The CFN conducts research on nanomaterial synthesis by assembly designing precise architectures with targeted functionality by organizing nanoscale components. The CFN researches and applies platforms for state-of-the-art techniques for Accelerated Nanomaterial Discovery, integrating synthesis, advanced characterization, physical modeling, and computer science to iteratively explore a wide range of material parameters. The CFN develops and utilizes advanced capabilities for studies of Nanomaterials in Operando Conditions for characterizing materials and reactions at the atomic scale in real-world environments.

Position Description:

The CFN is seeking a talented Postdoctoral Research Associate to conduct novel research investigating 2D material heterostructures for developing steep-slope transistors for energy-efficient microelectronics applications as a part of a DOE Microelectronics Science and Research Center (MSRC) project. You will explore the materials and device physics of 2D materials and associated heterostructures, such as those based on 2D transition-metal dichalcogenides (TMDCs), and perform nanofabrication and electrical characterization of 2D heterostructure devices using CFN's state-of-the-art Facilities, such as Quantum Materials Press (QPress) and Nanofabrication Facilities, to unravel the influences of atomic defects in 2D materials on the steep-slope device characteristics and performance. This project also aims to investigate the integration of 2D-3D and 2D-membrane semiconductor heterostructures utilizing the materials provided by other external MSRC project team members. You will work under the supervision of Dr. Chang-Yong Nam (Electronic Nanomaterials Group).

Essential Duties and Responsibilities:

• You will develop, fabricate, and characterize 2D heterostructures applicable to steep-slope electrical devices based on state-of-the-art 2D materials such as 2D TMDCs and graphene. 

• You will perform in-depth materials characterization on 2D materials, and electrically characterize the fabricated 2D devices, especially their transistor characteristics, as a function of temperature and the materials characteristics. 

• You will explore new materials, device structure & physics, and patterning methods for improving the performance of 2D steep-slope devices. 

• You will perform integration and nanofabrication of 2D-3D and 2D-membrane semiconductor heterostructures using the materials provided by the external MSRC project team members.

• You will collaborate with scientific staff with diverse backgrounds including materials science, nanofabrication, and device fabrication and physics. 

• You will disseminate research findings via paper publications and external presentations.

Required Knowledge, Skills, and Abilities:

• You have a Ph.D. in a relevant discipline (Materials Science, Physics, Electrical Engineering, or a related engineering discipline), conferred within the past five years or to be completed prior to the starting date. 

• You have demonstrated experimental expertise in 2D material heterostructure device fabrication and electrical characterization under various temperatures, including 2D materials mechanical exfoliation/transfer and low-temperature measurements using a cryostat, as well as associated materials and device physics. 

• You have demonstrated experimental experience in nanofabrication processes (e.g., electron-beam lithography, physical vapor deposition, atomic layer deposition etc.) and electrical device data analysis including transistor characteristics.

• You communicate effectively, verbally and in writing, evidenced by peer-reviewed publications and conference presentations/proceedings. 

• You are committed to creative and independent research, teamwork, and fostering an environment of safe scientific work practices. 

• You are committed to cultivating an inclusive and respectful workplace environment.

Preferred Knowledge, Skills, and Abilities:

• You have hands-on experimental experience with 2D materials and heterostructure fabrication utilizing manual and/or automated 2D materials transfer and stacking systems. 

• You have hands-on experience in fabricating and electrically characterizing 2D materials devices beyond transistors and basic electrical measurements, such as memristors for neuromorphic computing applications and pulse-based electrical measurements. 

• You have experience in optimizing 2D materials device performance via engineering materials and device physics, including contact engineering. 

• You have experience or working knowledge of the synthesis of 2D materials and membrane semiconductors via remote epitaxy. 

• You have experience in materials characterization and analysis relevant for 2D materials, including but not limited to photoluminescence, Raman scattering, scanning probe microscopy, ultrafast optical spectroscopy, and X-ray photoelectron spectroscopy (XPS).

Other Information:

• This is a 2-year Postdoc Assignment.

• BNL policy requires that after obtaining a PhD, eligible candidates for research associate appointments may not exceed a combined total of 5 years of relevant work experience as a post- doc and/or in an R&D position, excluding time associated with family planning, military service, illness, or other life-changing events.

Brookhaven National Laboratory is committed to providing fair, equitable and competitive compensation. The full salary range for this position is $71900 - $80000/ year. Salary offers will be commensurate with the final candidate’s qualification, education and experience and considered with the internal peer group.